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Practical Aspects of
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Practical Aspects of
Contents
List of Figures
Introduction
Parameter variations
Element matching
Local process variations
Global process variations
Process gradients
Boundary effects
The small-signal equivalent diagram of the MOS transistor
Low frequency model (saturation)
Low frequency model (linear region).
Capacitances of the small-signal equivalent diagram
Summary and typical values
MOS current mirrors
Low frequency analysis disregarding channel length modulation
Current mirror with channel length modulation
Small signal analysis of the MOS current mirror
Cascode current mirrors
Relative parameter variations in MOS current mirrors
MOS differential pairs
Large signal analysis of MOS differential pairs
Distortion of MOS differential pairs
Offset in MOS differential pairs
Noise coupling
Power supply coupling
Substrate noise coupling
Signal noise coupling
Conclusion
References
About this document ...
Flemming Stassen (Lektor)
Wed Jan 21 13:35:14 MET 1998