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Offset in MOS differential pairs

The previous analysis assumed that the transistors of the differential pair, M1 and M2 in Figure 5.1, are identical. In practice, this is rarely the case. In this section, the consequences of minor differences between the transistors are analysed in terms of the equivalent input offset voltage, VOS. VOS is defined as the input voltage, which must be applied in order to maintain the balance at the outputs.

In the analysis, we assume that the threshold voltages of the transistors differ by the amount tex2html_wrap_inline4248, and that the current factors differ by tex2html_wrap_inline4428:
eqnarray1997
Assuming, that the drain currents of the transistors are identical (maintained by an external feedback loop), Equation (3.2) yields the offset voltage, VOS, as the difference between the gate-source voltages of the transistors:
eqnarray2013
Assuming that tex2html_wrap_inline4428 is small compared to tex2html_wrap_inline4306, insertion of the effective gate voltage, tex2html_wrap_inline4436, yields
eqnarray2038
The difference between the threshold voltages is an explicit part of the expression, and the contribution can only be minimised by the use of layout techniques, e.g. common centroid. The relative difference between the values of the current gain factors, tex2html_wrap_inline4306, is multiplied by VGS-VT. Thus, selecting a `small' effective gate voltage, VGS-VT, will also minimise this contribution.



Flemming Stassen (Lektor)
Wed Jan 21 13:35:14 MET 1998