Lectures 1 through 3: The foundation of CMOS design



Lecture 1: Introduction to IC design

Purpose: To discuss the basics of integrated circuits focussing on the CMOS transistor
Contents:
Integrated circuits, history and motivation
Primer: A digital abstraction of MOS transistors
MOS transistor contact networks
Complementary MOS logic
MOSFET physical structure
The conductive channel - the threshold voltage
1st-order I-V characteristics (large signal model)
Literature:
Weste & Harris Chapter 1 (emphasis on 1.1 - 1.5)
Weste & Harris Chapter 2.1 - 2.2
Supplementary reading:
The 50th Anniversary of the Transistor - A Historical Note

For the games minded, try out this Java demo on CMOS Gates




Lecture 2: CMOS processing technology

Purpose: To illustrate essentials of CMOS processing technology
Contents:
CMOS processing - an overview
Excerpts from `Silicapolis - the Microelectronics Universe',
Courtesy Centre Culturel Scientifique & Technique of Grenoble and SGS-Thomson Microelectronics
Layout design rules
Electrical design rules
Literature:
Weste & Harris Chapter 3
Design Rules for a 90nm CMOS process
Supplementary reading:
James D. Plummer, Michael Deal and Peter B. Griffin: Modern CMOS Technology, Chapter 2, Prentice-Hall, Upper Saddle River (NJ), 2000

Michael E. Thomas and Robert H. Havemann: Overview of Interconnect, in
Yoshio Nishi and Robert Doering (ed): Handbook of Semiconductor Manufacturing Technologies, Chapter 10, Marcel Dekker, Inc., New York, 2000

For the games minded, try out this Java demo on Process yield




Lecture 3: The CMOS inverter

Purpose: To present the CMOS inverter
Contents:
MOS transistor intrincic: channel, overlap and diode capacitances
2nd-order effects: mobility degradation, body effect and leakage currents
Inverter DC transfer characteristics
Inverter gate threshold and noise margin
Inverter propagation delay
Literature:
Weste & Harris Chapter 2.3 - 2.7
Stassen: CMOS Inverter Transfer Characteristics



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Associate professor Flemming Stassen, stassen@imm.dtu.dk