Techniques for Leakage Power Reduction in Nanoscale Circuits: A Survey

Wei Liu

AbstractThis report surveys progress in the field of designing low power especially low leakage CMOS circuits in deep submicron era. The leakage mechanism and various recently proposed run time leakage reduction techniques are presented. Two designs from Cadence and Sony respectively, which can represent current industrial application of these techniques, are also illustrated.
TypeTechnical report
Year2007
PublisherInformatics and Mathematical Modelling, Technical University of Denmark, DTU
AddressRichard Petersens Plads, Building 321, DK-2800 Kgs. Lyngby
SeriesIMM-Technical Report-2007-04
Electronic version(s)[pdf]
BibTeX data [bibtex]
IMM Group(s)Computer Science & Engineering