Electrical Parameters for 0.18µm CMOS process: Wires

Capacitances to substrate Area [aF/µm²] Perimeter [aF/µm]
Metal6 Cm6 4.34 Cm6p -
Metal5 Cm5 5.45 Cm5p -
Metal4 Cm4 6.72 Cm4p -
Metal3 Cm3 8.77 Cm3p -
Metal2 Cm2 12.6 Cm2p -
Metal1 Cm1 22.4 Cm1p -
poly-Si Cp 93.3 Cpp -
n-type diffusion at 0V Cjn 1243 Cjnp 10.7
p-type diffusion at 0V Cjp 958 Cjpp 35.8
Sheet resistances [Ohm/sq]
Metal6, Metal5 Rsm6, Rsm5 0.035
Metal4, Metal3, Metal2 Rsm4, Rsm3, Rsm2, Rsm1 0.072
poly-Si (wire) Rsp 108
n+ diffusion Rsdn 3.8
p+ diffusion Rsdp 3.0
n-well Rsnw 1750
 
Contact resistances [ Ohm ]
Via5 Rv5             0.5
Via4, Via3, Via2, Via1 Rv4, Rv3, Rv2, Rv1 2.5
Cut Rcut 22
 
Maximum current densities at 343K [ mA / µm ]
Metal6, Metal5 Jm6, Jm5 2.28
Metal4, Metal3, Metal2, Metal1 Jm4, Jm3, Jm2 1.22
 
Maximum currents in contacts at 343K [ µA ]
Via5 Ivia5 720
Via4, Via3, Via2, Via1 Ivia4, Ivia3, Ivia2, Ivia1 220
Cut Icut 130

Modified by Flemming Stassen on 30th January 2002     stassen@imm.dtu.dk