Electrical Parameters for 0.18µm CMOS process: Vertical dimensions

Dimensions of various structures [ Å ]
Thickness of passivation   9000
Thickness of metal6 and metal5 tm6, tm5 9200
Thickness of metal4, metal3, metal2,
and metal1
tm4, tm3, tm2, tm1 5000
Thickness of poly tpo 2000
Thickness of isolation oxides:
metal6-to-metal5, metal5-to-metal4,
metal4-to-metal3, metal3-to-metal2,
metal2-to-metal1
to65, to54, to43, to32, to21 7000
Thickness of metal1-to-poly oxide to1p 9700
Field oxide (metal1-to-active) thickness tFmox 12000
Field oxide (poly-to-substrate) thickness tFpox 3700
Gate oxide thickness tox 32
Note: The process uses planarization techniques

Modified by Flemming Stassen on 30th January 2002     stassen@imm.dtu.dk