Electrical Parameters for 0.18µm CMOS process: Active Devices

Transistor parameters n-channel transistor p-channel transistor Unit
Threshold voltage Vtn,0 +0.470 Vtp,0 -0.480 V
Current factor KPn 265. KPp 78.7 µ A/V²
Bulk potential Phin +0.467 Phip -0.476 V
Back-bias effect gamman 0.373 gammap 0.607 V½
Channel length modulation lambdan 0.010 lambdap 0.098 V-1
Modified by Flemming Stassen on 30th January 2002     stassen@imm.dtu.dk